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 CM300DY-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMODTM H-Series Module
300 Amperes/1200 Volts
A B M P - DIA. (4 TYP.)
C2E1
E2
C1
E2 C2
R L D
C
F
C1 E1
R
G S - M6 THD. (3 TYP) N K K
G
H .110 TAB Q
N K
E
J N
E2
Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery (135ns) Free-Wheel Diode High Frequency Operation (20-25kHz) Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM300DY-24H is a 1200V (VCES), 300 Ampere Dual IGBTMODTM Power Module.
Type CM Current Rating Amperes 300 VCES Volts (x 50) 24
C2E1
E2
C1
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 4.33 3.6610.01 3.15 2.4410.01 1.18 Max. 1.18 0.98 0.85 0.83 Millimeters 110.0 93.00.25 80.0 62.00.25 30.0 Max. 30.0 25.0 21.5 21.2 Dimensions K L M N P Q R S Inches 0.71 0.59 0.55 0.28 0.26 Dia. 0.33 0.24 M6 Metric Millimeters 18.0 15.0 14.0 7.0 Dia. 6.5 8.5 6.0 M6
C1
E1
C2
273
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-24H Dual IGBTMODTM H-Series Module 300 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque M6 Terminal Screws Max. Mounting Torque M6 Mounting Screws Module Weight (Typical) V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd - - - VRMS
CM300DY-24H -40 to 150 -40 to 125 1200 20 300 600* 300 600* 2100 26 26 500 2500
Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
Static Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 30mA, VCE = 10V IC = 300A, VGE = 15V IC = 300A, VGE = 15V, Tj = 150C Total Gate Charge Diode Forward Voltage VCC = 600V, IC = 300A, VGS = 15V IE = 300A, VGS = 0V Min. - - 4.5 - - - - Typ. - - 6.0 2.5 2.25 1500 - Max. 1.0 0.5 7.5 3.4** - - 3.5 Units mA
A
Volts Volts Volts nC Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 300A, diE/dt = -600A/s IE = 300A, diE/dt = -600A/s VCC = 600V, IC = 300A, VGE1 = VGE2 = 15V, RG = 1.0 VGE = 0V, VCE = 10V, f = MHz Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 2.23 Max. 60 21 12 250 500 350 350 250 - Units nF nF nF ns ns ns ns ns
Diode Reverse Recovery Time Diode Reverse Recovery Charge
C
Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.06 0.12 0.035 Units C/W C/W C/W
274
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-24H Dual IGBTMODTM H-Series Module 300 Amperes/1200 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
600
COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES)
600
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE = 20V
15
5
VCE = 10V Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C
12
480
Tj = 25oC 11
480
4
360
10
360
3
240
240
2
120
7
9 8
120
1
0 0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
0 0 120 240 360 480 600
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
103
Tj = 25C Tj = 25C IC = 600A
EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF)
102
Cies
8
101
6
Coes
IC = 300A
102
4
Cres
100
2
IC = 120A
VGE = 0V f = 1MHz
0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
101 0 0.8 1.6 2.4 3.2 4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
10-1 10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
103
td(off)
REVERSE RECOVERY TIME, t rr, (ns)
103
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 300A
SWITCHING TIME, (ns)
tf td(on)
16
Irr
VCC = 400V VCC = 600V
102
102
t rr
12
101
8
tr
VCC = 600V VGE = 15V RG = 1 Tj = 125C
di/dt = -600A/sec Tj = 25C
4
101 101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
101 101
102
EMITTER CURRENT, IE, (AMPERES)
100 103
0 0 600 1200 1800 2400
GATE CHARGE, QG, (nC)
275
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM300DY-24H Dual IGBTMODTM H-Series Module 300 Amperes/1200 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE)
100
Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.06C/W
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE)
10-3 101
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100
101
10-3 101
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100
101
100
Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.12C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
276


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